Semiconductor materials are the cornerstone of the electronic information industry. At present, with the shrinking of transistor characteristics and size, the mainstream silicon-based materials and CMOS (Complementary Metal-Oxide Semiconductor) technologies are being developed to the 10-nm process node due to the physical laws such as short channel effects and the manufacturing cost. Moore's Law may end. Therefore, the development of new high-performance semiconductor channel materials and new transistor technology is the scientific and industrial nearly 20 years of mainstream research. In many CMOS channel material systems, devices with high mobility two-dimensional semiconductors are much more compatible with conventional microelectronics processes than one-dimensional nanowires and carbon nanotubes, while their ultra-thin planar structure effectively suppresses short ditches Road effect, is considered to be built after the silicon era of nanoelectronic devices and digital integrated circuits ideal channel material. However, the existing two-dimensional material systems (graphene, topological insulators, transition metal chalcogenides, black phosphorus, etc.) can not meet the realistic requirements of ultra-high mobility, proper band gap, environmental stability and batch preparation, High-performance two-dimensional semiconductor new material system is imminent. New Stable, Ultra-High-Mobility Two-Dimensional Semiconductor Material BOX and Transistor Schematic Recently, Prof. Peng Hai-lin from Peking University's School of Chemistry and Molecular Engineering and his collaborators for the first time discovered a new class of two-dimensional semiconductors (BiO2O2Se, Bi2O2Se, Bi2O2Se and Bi2O2Se) with high electron mobility, suitable bandgap, ), Showing excellent performance in field-effect transistor devices and quantum transport. Based on the previous systematic studies on two-dimensional quantum materials such as topological insulators (Bi2Se3, Bi2Te3), Peng Hailin's research group proposed to replace the heavy elements in the topological insulator with light elements in order to reduce relativistic effects such as spin-orbit coupling of heavy elements, Regulate its energy band structure, eliminate the topological state of the metallic topography and obtain two-dimensional semiconductors with high mobility. After the theoretical design of the material and years of experimental exploration, the group found a new type of ultra-high mobility semiconductor layered oxide material Bi2O2Se, and the use of chemical vapor deposition (CVD) prepared a high stability of the second Victoria Bi2O2Se crystal. Based on theoretical calculations and experimental measurements of electrical transport, the Bi2O2Se material has been demonstrated to have a suitable bandgap (~ 0.8eV), a very small electron effective mass (~ 0.14m0) and an extremely high electron mobility. The transport measurements of the system show that the Bi 2 O 2 Se two-dimensional crystals prepared by CVD have a low temperature Hall mobility higher than 20000cm 2 / V · s when unpackaged and show significant SdH quantum oscillation behavior. The standard Bi2O2Se top gate field effect transistor Exhibit very high apparent field-effect mobility (~ 2000 cm2 / V · s) and Hall mobility (~ 450 cm2 / V · s) at room temperature with a large current switching ratio (> 106) Threshold swing (~ 65mV / dec). Two-dimensional Bi2O2Se these excellent performance and comprehensive index has surpassed the existing one-dimensional and two-dimensional material system. Bi2O2Se This high mobility semiconductors feature may also be extended to other bismuth oxychalcogenide materials (BOX: Bi2O2S, Bi2O2Se, Bi2O2Te). In combination with its outstanding environmental stability and ease of scale-up, ultra-high mobility 2D semiconductor BOX material system has unique advantages in constructing ultra-high speed and low power electronic devices and is expected to solve the bottleneck problem of Moore's Law going forward , Bringing new technological changes to the micro-nano electronic devices and having important basic scientific significance and practical application value. Concrete Pump Wear Plate And Ring , we have two kinds, single wall alloy steel and double wall alloy steel , always is tungsten carbide alloy. The original profuced wear plate service life is 50000cbm-60000cbm, Double ring segementalalloy steel one can solve th problem of alloy collapse, the service life is more longer, quality is best and more wear resisting, but the price is higher. We have Putzmeister, schwing, sany, zoomline, Kyokuto, IHI , CIFA , Sermac, Niigata and so on brands! Concrete Pump Wear Plate And Ring Concrete Pump Wear Plate, Concrete Pump Cutting Ring,Concrete Pump Wear Ring,Concrete Pump Eyes Plate Hebei Shengdebaolong International Trading Co.,ltd , https://www.sdblpumpparts.com