Progress in semiconductor surface-enhanced Raman scattering substrate research in Shenzhen Advanced Institute

[ Instrument Network Instrument Development ] On August 7, 2019, the Yang Chunlei team of the Photonics Information and Energy Materials Research Center of the Institute of Materials Science and Technology, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences made new progress in semiconductor SERS substrate research. The related results were Tunable 3D light trapping architectures. Based on self-assembled SnSe2 nanoplate arrays for ultrasensitive SERS detection ("Adjustable trapping structure based on self-assembled tin selenide nanosheet arrays for ultra-sensitive SERS detection") published in the Journal of Photoelectromagnetic Functional Materials Journal of Materials Chemistry C (2019, DOI: 10.1039/C9TC03715B). The article was also selected as 2019 Journal of Materials Chemistry C HOT Papers. Master students Li Weiwei and Xiong Lei are the co-first authors of the paper. The authors are Li Guangyuan, Chen Ming and researcher Yang Chunlei.
Based on the tunable light trapping structure of the self-assembled SnSe2 nanosheet array, the light-capturing capability is up to 96%.
Surface-enhanced Raman scattering (SERS) has shown great potential in physics, chemistry, biology, medicine and other fields due to its high sensitivity and non-destructive testing. At present, the conventional SERS substrate is still a precious metal material such as gold, silver, copper, etc., but the manufacturing cost is high, the process is complicated, and the repeatability and biocompatibility are poor.
In order to overcome these limitations, semiconductor material-based SERS active substrates have received increasing attention with their low cost, good biocompatibility and high stability. However, the enhancement factor of the SERS substrate of the semiconductor material (derived from the charge transfer mechanism) is relatively weak compared to the noble metal SERS substrate, which is insufficient for molecular detection, thereby hindering its practical application.
The use of semiconductor materials with light-trapping structures as SERS active substrates has attracted increasing attention, where multiple reflections and scattering of light can increase the enhancement factor. However, the preparation of these semiconductor SERS active substrates typically requires complex processes, and these methods typically result in uneven and separate particles/flakes that are difficult to meet the high performance and reliability requirements of practical applications. Here, the research team demonstrated that SnSe2 nanosheet arrays (NPAs) grown by self-assembly can be used as uniform, high performance and reliable SERS substrates. The microcavity array formed by SnSe2 NPAs can effectively capture light (up to 96%), thereby improving the enhancement factor.
Thanks to the synergistic effect of charge transfer process and enhanced light trapping capability, SSER substrates based on SnSe2 NPAs exhibit ultra-low detection limits (1×10-12 M), high enhancement factors (1.33×106) and excellent uniformity. Sexuality (relative standard deviation reduced to 7.7%), reaching or exceeding the performance of conventional metal SERS substrates, is currently reported as one of the highest sensitivity semiconductor SERS substrates.
In addition, the paper systematically studied the spatial structure (plane and cavity) formed by different SnSe2 nanosheets, the influence of the height and tilt angle of SnSe2 NPAs on SERS performance, and found that its SERS performance is strongly dependent on light trapping ability and absorption loss. . The relevant research results not only provide an effective strategy for obtaining tunable, uniform and high performance SERS substrates, but also have important guiding significance for designing 3D light capture architecture.
The research was supported by the National Natural Science Foundation of China and the Shenzhen Basic Research Layout Project.

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Aluminum Plate Punching Wire Mesh For Construction Hoist

ITEM

UNIT

SS100/100

SS100

Rated Load

kg

1000/1000

1000

Lifting speed

m/min

23.5

23.5

Standard height

m

24

24

Max lifting height

m

80-130

80-130

Cage size

m

2.8*1.5*1.9

2.8*1.5*1.9

Mast section size

m

0.65*0.65*1.5 or 0.8*0.8*1.5

0.65*0.65*1.5 or 0.8*0.8*1.5

Motors power

kw

7.5*2

7.5

Wirerope

/

6*37+1-12-1670-R

6*37+1-12-1670-R

Weight for 24m height

kg

4350

3340

Mast section main limb

mm

Φ76*4

Φ76*4


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