Our smartphones all contain a bright AMOLED (Active Matrix / Organic Light Emitting Diode) display. At least two silicon transistors are hidden behind each single pixel in these displays, and the silicon transistors are manufactured in large quantities based on laser annealing. The traditional method of preparing these materials usually requires high temperatures of 1000 ° C, while laser technology achieves the same effect with lower temperatures, even on plastic substrates (melting points below 300 ° C). Interestingly, the same operating process can also be applied to the preparation of graphene materials. Using high-resolution transmission electron microscopy, it was observed that after 30 nanosecond laser pulses, the silicon carbide (SiC) matrix melted and decomposed into carbon monolayer and silicon monolayer. If more laser pulses are applied, the carbon monolayer will make up the graphene structure and the silicon will vaporize and separate. Our smartphones all contain a bright AMOLED display. At least two silicon transistors are hidden behind each single pixel in these displays, and the silicon transistors are manufactured in large quantities based on laser annealing. The traditional method of preparing these materials usually requires high temperatures of 1000 ° C, while laser technology achieves the same effect with lower temperatures, even on plastic substrates (melting points below 300 ° C). Interestingly, the same operating process can also be applied to the preparation of graphene materials. Graphene is a kind of nano-material made of carbon. The ultra-thin material is not only strong, but also its excellent conductive and thermal conductivity attracts scientists all over the world. Professor KEON Jae Lee from the Center for Multidimensional Carbon Materials at the Institute for Basic Science (IBS) and a research team from the Korea Institute of Science and Technology (KAIST) CHOI Sung-Yool's group has discovered a graphene synthesis mechanism using laser-induced solid-phase separation of single crystal silicon carbide (SiC). In this study, published in Nature Communications, describes how laser technology can be used to separate mixed components (SiC) into ultra-thin carbon and silicon ele- ments. Although the mechanism of the effect of excimer laser on the conversion of basic materials (such as silicon) has been explained in some basic researches, due to the phase transfer process of complex components and the ultra-short processing time, the laser is more effective for multi-component complex systems such as SiC ) Mechanism of action is seldom studied. Using high-resolution microscopy images and molecular dynamics simulations, scientists found that when a single pulse of 30-nanosecond Xenon Xenon excimer laser was used to melt SiC, a SiC liquid-phase layer was formed in which the upper layer was a disordered carbon with graphite domains Layer (about 2.5 nm thick), and the underlying polysilicon layer (about 5 nm). With the increase of pulse intensity, the sublimation of silicon can be induced and the disordered carbon layer will be transformed into multi-layer graphene. "This research shows that the laser material interaction technology can be a powerful tool for the next generation of 2D nanomaterials," said Professor Keon. Professor Choi added: "In the future we can use laser-induced phase separation of complex compounds to synthesize new 2D materials." Professor Keon from IBS is from KAIST School of Materials Science and Engineering, Professor Choi from KAIST Electrical Engineering and Graphene Research center.
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